Title :
A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology
Author :
Kao, H.L. ; Shih, S.P. ; Yeh, C.S. ; Yang, C.M. ; Ke, C.Y. ; Lee, Y.C. ; Fu, Jeffrey S. ; Chang, L.C.
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
A low phase noise, small power dissipation and small sized Ka-band Triple Push Coupled Pair using 0.18 μm CMOS technology is described. The VCO operated can be tuned between 37.3 GHz and 40.1 GHz and has low phase noise of -107 dBc/Hz at a 1 MHz offset. The Figure of merit (FOM) is -184.8 dBc/Hz and the power-frequency tuning-normalized figure-of-merit (PFTN) is -11.8 dB. The power consumption of the VCO was 24.9 mW with only 0.52 mm2 chip area.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS technology; FOM; Ka-band triple push coupled pair VCO; PFTN; frequency 37.3 GHz; frequency 40.1 GHz; phase noise; power 24.9 mW; power consumption; power-frequency tuning-normalized figure-of-merit; size 0.18 mum; CMOS integrated circuits; CMOS technology; Phase noise; Silicon; Tuning; Voltage-controlled oscillators; CMOS; FOM; Ka-band; PFTN; phase noise; tuning range; voltage control oscillators (VCOs);
Conference_Titel :
Wireless and Optical Communications Networks (WOCN), 2011 Eighth International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4577-0262-4
DOI :
10.1109/WOCN.2011.5872933
