A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology

Author

Kao, H.L. ; Shih, S.P. ; Yeh, C.S. ; Yang, C.M. ; Ke, C.Y. ; Lee, Y.C. ; Fu, Jeffrey S. ; Chang, L.C.

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2011

fDate

24-26 May 2011

Firstpage

1

Lastpage

4

Abstract

A low phase noise, small power dissipation and small sized Ka-band Triple Push Coupled Pair using 0.18 μm CMOS technology is described. The VCO operated can be tuned between 37.3 GHz and 40.1 GHz and has low phase noise of -107 dBc/Hz at a 1 MHz offset. The Figure of merit (FOM) is -184.8 dBc/Hz and the power-frequency tuning-normalized figure-of-merit (PFTN) is -11.8 dB. The power consumption of the VCO was 24.9 mW with only 0.52 mm² chip area.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; millimetre wave oscillators; phase noise; voltage-controlled oscillators; CMOS technology; FOM; Ka-band triple push coupled pair VCO; PFTN; frequency 37.3 GHz; frequency 40.1 GHz; phase noise; power 24.9 mW; power consumption; power-frequency tuning-normalized figure-of-merit; size 0.18 mum; CMOS integrated circuits; CMOS technology; Phase noise; Silicon; Tuning; Voltage-controlled oscillators; CMOS; FOM; Ka-band; PFTN; phase noise; tuning range; voltage control oscillators (VCOs);

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Optical Communications Networks (WOCN), 2011 Eighth International Conference on

Conference_Location

Paris

ISSN

Pending

Print_ISBN

978-1-4577-0262-4

Type

conf

DOI

10.1109/WOCN.2011.5872933

Filename

5872933