DocumentCode :
3515202
Title :
Effect of base width variation on the performance of a proposed ultraviolet low cost high efficiency solar cell structure
Author :
Salem, Marwa S. ; Shaker, Ahmed ; Abouelatta, Mohamed ; Zekry, Abdelhalim
Author_Institution :
Fac. of Eng., Ain Shams Univ., Cairo, Egypt
fYear :
2012
fDate :
3-8 June 2012
Abstract :
In this paper the effect of varying the base width on the performance of a proposed ultraviolet low cost high efficiency solar cell structure is presented. The structure is considered to be low cost for two reasons: firstly, it is etched through a low cost starting material using a commercial p+ silicon wafer. Secondly it responds to the ultraviolet part of the solar radiation spectrum simply by eliminating the top n+ layer of the structure. Thus it doesn´t need expensive materials to be ultraviolet on. The structure based on the vertical generation and lateral collection of light generated carriers. Simulations for the ultraviolet structure are carried out using advanced TCAD tools. The illuminated I-V C/Cs at different base width is presented. For each base width, the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (F.F.) and conversion efficiency are calculated. In addition the quantum efficiency and spectral response at different base width are presented. The optimum base width which enhances the structure performance is selected.
Keywords :
current density; solar cells; sunlight; advanced TCAD tools; base width variation; commercial p+ silicon wafer; conversion efficiency; light generated carriers; low cost starting material; quantum efficiency; short circuit current density; solar radiation spectrum; spectral response; ultraviolet low cost high efficiency solar cell structure; Educational institutions; Photovoltaic cells; Photovoltaic systems; Short circuit currents; Silicon; Solar radiation; Base width variation; High efficiency; Low cost; Solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317718
Filename :
6317718
Link To Document :
بازگشت