Title :
Reverse stress metastability of shunt current in CIGS solar cells
Author :
Dongaonkar, Sourabh ; Sheets, Erik ; Agrawal, Rakesh ; Alam, Muhammad A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, NJ, USA
Abstract :
Partial shading in thin film solar panels can result in reverse bias stress across shaded cells. Therefore, it is important to understand the effect of such reverse stress in commercially competitive PV technologies such as CIGS. In this paper, we systematically investigate the effect of moderate reverse bias on solution-processed CIGS solar cells. We subject the solar cells to varying degrees of reverse biases and continuously monitor the impact of the stress on dark current. We also explore the relaxation behavior of dark current following passive storage and the long term effect of the shadow stress on power output of the cell. We find that the reverse stress affects only the localized shunt current paths, without affecting the bulk device characteristics. The shunt current exhibits a metastable change with reverse stress, and can increase or decrease on application of reverse stress. We analyze this phenomenon in detail, and discuss the hypothesis that can explain its characteristic features.
Keywords :
copper compounds; gallium compounds; indium compounds; metastable states; semiconductor thin films; solar cells; stress relaxation; ternary semiconductors; thin film devices; CIGS; PV technology; bulk device characteristics; dark current relaxation behavior; localized shunt current paths; partial shading; passive storage; reverse bias stress; reverse stress metastability; shadow stress effect; solution-processed CIGS solar cells; thin film solar panels; Current measurement; Dark current; Photovoltaic cells; Photovoltaic systems; Stress; Stress measurement; CIGS; photovoltaic cells; semiconductor device breakdown; shunt;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317740