Title :
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs
Author :
Surya, Charles ; Wang, W. ; Fong, W.K. ; Chan, C.H. ; Lai, P.T.
Author_Institution :
Dept. of Electron. Eng., Hong Kong Polytech. Univ., Kowloon, Hong Kong
Abstract :
Flicker noise in backsurface gettered, nitrided n-channel MOSFETs is characterized over a wide range of temperatures and biases. The gettering time ranged from from 10 to 40 minutes. The noise power spectra for devices with different gettering times are compared to the ungettered devices which serve as the control. It is found that flicker noise is reduced by backsurface gettering for short gettering times. A rebound in the noise magnitude is observed for long gettering times. Investigations of the temperature dependencies of the noise power spectra indicates that the low-frequency noise arises from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering results in the modification of the energy distribution of the interface traps, probably due to stress relaxation at the Si-SiO2 interface
Keywords :
MOSFET; electron traps; elemental semiconductors; flicker noise; getters; hole traps; ion beam effects; nitridation; rapid thermal annealing; semiconductor device noise; semiconductor-insulator boundaries; silicon; silicon compounds; 10 to 40 min; LF noise; NMOSFET; Si-SiO2; Si-SiO2 interface traps; backsurface gettering; energy distribution; flicker noise; gettering times; interface traps; low-energy Ar+ backsurface bombardment; low-frequency noise; n-MOSFETs; n-channel nitrided MOSFETs; noise power spectra; stress relaxation; temperature dependencies; thermal activation; 1f noise; Electron traps; Gettering; Interface states; Low-frequency noise; MOSFET circuits; Noise measurement; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996., IEEE Hong Kong
Print_ISBN :
0-7803-3091-9
DOI :
10.1109/HKEDM.1996.566320
