Title :
Structure and morphology of thin Al-layers in resonator´s systems after rapid thermal annealing
Author :
Spassov, L. ; Georgieva, K. ; Marinov, M.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
Abstract :
The aim of this paper is the study of structure and morphology of Al-layers after rapid thermal annealing (RTA). Al-layers with thickness of 120 nm are prepared on quartz substrates AT-cut. The films are deposited by four different methods: thermal vacuum evaporation, DC magnetron sputtering, RF sputtering and E-beam evaporation. Obtained samples are subjected to RTA in vacuum 6.66.10-3 Pa. The temperature of the heater is changed from 700°C to 800°C for duration of 5s to 180s. The structural and morphological investigations of the Al layers are carried out by Reflection High-Energy Electron Diffraction (RHEED) with an accelerating voltage of 50 kV and Scanning Electron Microscopy (SEM) on JSM-5300. The morphology and the structure of as-deposited layers are registered. It is established that these two characteristics are varied and depend on the method of deposition. The changes which take place as a result of RTA treatment are studied. The influence of RTA-parameters on morphology and structure depends on the initial state of the layers and can be affected by different grades
Keywords :
aluminium; crystal morphology; crystal resonators; electrodes; metallic thin films; quartz; rapid thermal annealing; reflection high energy electron diffraction; scanning electron microscopy; sputtered coatings; surface structure; vacuum deposited coatings; vapour deposited coatings; 120 nm; 5 to 180 s; 6.66E-3 Pa; 700 to 800 C; AT-cut; Al; Al-SiO2; DC magnetron sputtering; E-beam evaporation; RF sputtering; RHEED; RTA parameters; SEM; SiO2; deposition methods; electrode material; morphology; polycrystalline layer; quartz substrates; rapid thermal annealing; recrystallization process; reflection high-energy electron diffraction; resonator systems; scanning electron microscopy; surface structure; thermal vacuum evaporation; thin Al films; Acceleration; Diffraction; Morphology; Radio frequency; Rapid thermal annealing; Reflection; Scanning electron microscopy; Sputtering; Temperature; Voltage;
Conference_Titel :
Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European
Conference_Location :
Besancon
Print_ISBN :
0-7803-5400-1
DOI :
10.1109/FREQ.1999.840811