Title :
The effect of energetic states of BN band gap on conduction
Author :
Lopatin, V.V. ; Galanov, Yu I. ; Konusov, F.V.
Author_Institution :
High Voltage Inst., Tomsk, USSR
Abstract :
The authors present results of investigations of nonequilibrium conduction and thermally stimulated luminescence (TSL) carried out on PBN (pyrolitic boron nitride) using modulated thermally activated spectroscopy (MTAS). In analyzing the results the authors used the TSL spectra and luminescence stimulated by X-ray emission. To find the position of the energetic levels of local energetic states in the bandgap, which were observed with the MTAS technique, the sign of the charge carriers causing conduction was determined. The techniques used made it possible to observe the transport characteristics and the parameters of the local levels in the heterogeneous polycrystalline materials
Keywords :
boron compounds; defect electron energy states; electrical conductivity of crystalline semiconductors and insulators; electron traps; electron-hole recombination; energy gap; hole traps; localised electron states; luminescence of inorganic solids; thermoluminescence; X-ray emission stimulated luminescence; band gap; energetic states; heterogeneous polycrystalline materials; local levels; modulated thermally activated spectroscopy; nonequilibrium conduction; pyrolytic BN; thermally stimulated luminescence; transport characteristics; Charge carriers; Dielectrics and electrical insulation; Electron traps; Impurities; Kinetic theory; Photonic band gap; Spontaneous emission; Temperature distribution; Wideband; X-rays;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
Conference_Location :
Trondheim
DOI :
10.1109/ICSD.1989.69175
