Two-tone third-order intermodulation distortion characteristics of an HBT optoelectronic mixer using a two-laser approach

Author

Liu, C.P. ; Seeds, A.J. ; Betser, Y. ; Sidorov, V. ; Ritter, D. ; Madjar, A.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, UK

fYear

1999

fDate

1999

Firstpage

87

Abstract

The third-order intermodulation distortion characteristics of a three-terminal InP-InGaAs HBT optoelectronic mixer are reported for the first time. The SFDR was 94 dB (1 Hz) in down-conversion (3.682 GHz to 300 MHz), and 96 dB (1 Hz) in up-conversion (3.682 GHz to 7.064 GHz)

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; intermodulation distortion; microwave mixers; microwave photonics; millimetre wave mixers; optical communication equipment; 3.682 GHz to 300 MHz; 3.682 to 7.064 GHz; HBT optoelectronic mixer; InP-InGaAs; OC equipment; SFDR; down-conversion; microwave photonics; three-terminal InP/InGaAs HBT optoelectronic mixer; two-laser approach; two-tone third-order intermodulation distortion characteristics; up-conversion; Diode lasers; Distortion measurement; Frequency; Gold; Heterojunction bipolar transistors; Intermodulation distortion; Mixers; Optical distortion; Optical modulation; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1999. MWP '99. International Topical Meeting on

Conference_Location

Melbourne, Vic.

Print_ISBN

0-7803-5558-X

Type

conf

DOI

10.1109/MWP.1999.819658

Filename

819658