attoF MOS varactor RF measurement VNA coupled with interferometer

Author

Debroucke, Romain ; Gloria, Daniel ; Ducatteau, Damien ; Theron, Didier ; Tanbakuchi, Hassan ; Gaquiere, Christophe

fYear

2011

fDate

10-10 June 2011

Firstpage

1

Lastpage

2

Abstract

Nowadays with capabilities offered by advanced silicon technologies both for design above 60GHz and for high performance Digitally Controlled Oscillator, the use of sub fF varactor is mandatory. One of the challenge to develop this device is to be able to characterize it accurately for process optimization and modeling. In high and above all low frequency range, this type of measurement has to face with the issue of high impedance characterization and mismatch regarding 50Ω. In the RF range, Agilent is developing an interferometer module added to a VNA able to characterize very low capacitance. In this paper, we evaluate this equipment using dedicated calibration silicon structures to measure 500aF MOS varactor and compare measurement to developed electrical model.

Keywords

MOS capacitors; calibration; elemental semiconductors; network analysers; optimisation; radiofrequency measurement; radiowave interferometers; silicon; varactors; voltage-controlled oscillators; RF measurement; VNA; attoF MOS varactor; calibration; digital controlled oscillator; impedance characterization; interferometer; process optimization; BiCMOS integrated circuits; Calibration; Capacitance; Impedance; Silicon; Transmission line measurements; Varactors; High impedance; VNA; attoFarad; calibration; high frequency; interferometer; varactor;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Conference (ARFTG), 2011 77th ARFTG

Conference_Location

Baltimore, MD

Print_ISBN

978-1-61284-959-1

Electronic_ISBN

978-1-61284-960-7

Type

conf

DOI

10.1109/ARFTG77.2011.6034572

Filename

6034572