DocumentCode :
3515956
Title :
Fabrication of Ag micromaterials by utilizing stress-induced migration
Author :
Saka, M. ; Yasuda, M. ; Tohmyoh, H. ; Settsu, N.
Author_Institution :
Dept. of Nanomech., Tohoku Univ., Sendai
fYear :
2008
fDate :
1-4 Sept. 2008
Firstpage :
507
Lastpage :
510
Abstract :
Silver micromaterials are highly prospected for modern electronic industries, especially due to their high electrical conductivity. Up to now, the formation of Ag nanowires that has been reported is based on chemical techniques. The processes of the chemical techniques are sophisticated, but somewhat complicated. On the other hand, a physical technique for fabricating metallic nanowires in a simple and controlled way by utilizing stress-induced migration has recently been reported. In this approach, it is recognized that the gradient of compressive hydrostatic stress might be the driving force for atomic diffusion. In the technique utilizing stress-induced migration, heating is required and oxide layer is necessary for fabrication of nano/micro materials. When Ag is heated, the key material, namely the oxide layer, decomposes at high temperature. In the present paper, an approach for fabrication of Ag nano/micro materials based on stress-induced migration is proposed, in which SiO2 layer is used as a passivation layer to overcome the drawback of the oxide layer.
Keywords :
diffusion; heat treatment; internal stresses; microfabrication; nanofabrication; nanowires; silicon compounds; silver; Ag-SiO2; atomic diffusion; compressive hydrostatic stress; heating; nanowires; passivation layer; silver micromaterials; stress-induced migration; Atomic layer deposition; Chemical processes; Compressive stress; Conductivity; Electronics industry; Fabrication; Heating; Nanowires; Silver; Stress control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics System-Integration Technology Conference, 2008. ESTC 2008. 2nd
Conference_Location :
Greenwich
Print_ISBN :
978-1-4244-2813-7
Electronic_ISBN :
978-1-4244-2814-4
Type :
conf
DOI :
10.1109/ESTC.2008.4684400
Filename :
4684400
Link To Document :
بازگشت