DocumentCode :
3516185
Title :
Structure simulation of screen printed local back surface field for rear passivated silicon solar cells
Author :
Chen, Dammg ; Liang, Zongcun ; Yang, Yang ; Shen, Hui ; Liu, Yang
Author_Institution :
State Key Lab. of Optoelectron. Mater. & Technol., Sun Yat-sen Univ., Guangzhou, China
fYear :
2012
fDate :
3-8 June 2012
Abstract :
The research of this paper was focused on the simulation of screen printed Local Back Surface Field (LBSF) for the rear passivated solar cells. The thickness, homogeneity and cavity effect were studied. According to the simulation results, the thickness of LBSF should be at least 2 μm in order to gain high efficiency of solar cells. If LBSF was thick enough, the homogeneity of LBSF had less impact on the cell performance. However, the incomplete formation of LBSF layer would drastically decrease the open circuit voltage (Voc) of cells. The thinnest part of an inhomogeneous LBSF should be 1 to 2 μm at the least. As for the influence of the cavities inside the local contacts, a single long cavity would cause a power loss of 8.20% to 11.15% relatively, and the cavity group made up of many long cavities would cause a power loss of about 11.53% to100% relatively.
Keywords :
elemental semiconductors; passivation; silicon; solar cells; Si; cells open circuit voltage; rear passivated solar cells; screen printed local back surface field; size 1 mum to 2 mum; Cavity resonators; Contacts; Nonhomogeneous media; Photovoltaic cells; Photovoltaic systems; Solar energy; LBSF; solar cells; structure simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317775
Filename :
6317775
Link To Document :
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