• DocumentCode
    3516547
  • Title

    Crystalline silicon solar cells with segmented selective emitter by ultraviolet laser doping

  • Author

    Renshaw, John S. ; Upadhyaya, Ajay ; Upadhyaya, Vijaykumar ; Rohatgi, Ajeet

  • Author_Institution
    Univ. Center of Excellence for Photovoltaics, Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    A solar cell design with a UV laser doped segmented selective emitter is reported. Several different laser settings are explored to determine the optimum power for this process and it is found that the pitch between the segmented n++ regions is critical to the short circuit current (Jsc) of the cell. An increase of 0.4 mA/cm2 is seen in the Jsc when the pitch is increased from 50 μm to 200 μm while maintaining the fill factor of 79%.
  • Keywords
    elemental semiconductors; laser materials processing; semiconductor doping; short-circuit currents; silicon; solar cells; ultraviolet spectra; Si; crystalline silicon solar cells; laser settings; segmented n++ regions; segmented selective emitter; short circuit current; ultraviolet laser doping; Contact resistance; Doping; Measurement by laser beam; Photovoltaic cells; Power lasers; Silicon; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317794
  • Filename
    6317794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3516547