DocumentCode :
3516547
Title :
Crystalline silicon solar cells with segmented selective emitter by ultraviolet laser doping
Author :
Renshaw, John S. ; Upadhyaya, Ajay ; Upadhyaya, Vijaykumar ; Rohatgi, Ajeet
Author_Institution :
Univ. Center of Excellence for Photovoltaics, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2012
fDate :
3-8 June 2012
Abstract :
A solar cell design with a UV laser doped segmented selective emitter is reported. Several different laser settings are explored to determine the optimum power for this process and it is found that the pitch between the segmented n++ regions is critical to the short circuit current (Jsc) of the cell. An increase of 0.4 mA/cm2 is seen in the Jsc when the pitch is increased from 50 μm to 200 μm while maintaining the fill factor of 79%.
Keywords :
elemental semiconductors; laser materials processing; semiconductor doping; short-circuit currents; silicon; solar cells; ultraviolet spectra; Si; crystalline silicon solar cells; laser settings; segmented n++ regions; segmented selective emitter; short circuit current; ultraviolet laser doping; Contact resistance; Doping; Measurement by laser beam; Photovoltaic cells; Power lasers; Silicon; Surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317794
Filename :
6317794
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3516547
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