Title :
Fabrication of α-Fe2O3 thin film for gas sensor
Author :
Lee, Eun-Tae ; Kim, Bum-Jin ; Kim, Hyo-young ; Jang, Gun-Eik
Author_Institution :
Dept. of Mater. Eng., Chung-Buk Nat. Univ., Cheongju, South Korea
Abstract :
α-Fe3O3 thin films were prepared on a Al2O3 substrate by PECVD (Plasma-Enhanced Chemical Vapour Deposition) method in the vacuum of 10-3 torr with deposition rate of 2 μ m/min. The applied rf Power was 100 Watt and the substrate temperature was 80~200°C respectively. As substrate and bubbler temperature was 150°C and 50°C, α-Fe2 O3 thin film shows a fine morphology with 1 μm size. This α-Fe2O3 thin film had a porous island structure with the porosity of 20~30%. The obtained results indicate that the fabricated α-Fe2O3 film might be used as semiconducting gas sensor application
Keywords :
electric sensing devices; ferrite devices; gas sensors; iron compounds; plasma CVD; porous materials; semiconductor growth; semiconductor materials; semiconductor thin films; 100 W; 1E-3 torr; 80 to 200 degC; Al2O3; Fe2O3-Al2O3; PECVD; bubbler temperature; deposition rate; gas sensor; porosity; porous island structure; semiconducting sensor application; substrate temperature; Chemical vapor deposition; Fabrication; Morphology; Plasma chemistry; Plasma temperature; Semiconductor films; Semiconductor thin films; Sputtering; Substrates; Transistors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616628
