• DocumentCode
    3516640
  • Title

    Industrially feasible casting-mono crystalline solar cells with PECVD AlOx/SiNx rear passivation stack towards 19.6% efficiency

  • Author

    Sun, Baoming ; Sheng, Jian ; Yuan, Shengzhao ; Zhang, Chun ; Feng, Zhiqiang ; Huang, Qiang

  • Author_Institution
    State Key Lab. of PV Sci. & Technol., Trina Solar Ltd. Co., ChangZhou, China
  • fYear
    2012
  • fDate
    3-8 June 2012
  • Abstract
    Cost reduction and efficiency gain are the major goals of research and development in crystalline silicon solar cell technology. Casting-mono crystalline silicon produces higher cell efficiencies compared to multi-crystalline silicon material with the same average minority carrier lifetime and with a similarly low production cost. Aluminum oxide provides excellent passivation on crystalline solar cell and has received great research interests in recent years due to combination of chemical passivation and field-effect passivation provided by a large amount of fixed negative charges. In particular, deposition of AlOx using ALD or PECVD in PERC structure has been well studied. PECVD is preferred for its fast deposition rate. Our research shows that PECVD AlOx films indeed show good passivation quality on casting-mono wafers, which can achieve more than 200μs average lifetime, 700mV implied Voc and with good stability. Combined with the laser ablation to realize the PERC structure, the PECVD-AlOx contributes to a 12mV increase in Voc compared to the Al-BSF cell. The final cell efficiency reached 19.4% in average with a batch size of 30 wafers and 19.6% for the best cell. Additionally, PECVD AlOx can be easily integrated with the current industrial production line at no significant additional cost.
  • Keywords
    aluminium compounds; atomic layer deposition; carrier lifetime; casting; elemental semiconductors; laser ablation; minority carriers; passivation; plasma CVD; silicon; silicon compounds; solar cells; ALD; AlOx-SiNx; PECVD; PERC structure; Si; aluminum oxide; casting-mono crystalline silicon; chemical passivation; crystalline silicon solar cell; efficiency 19.6 percent; field-effect passivation; industrially feasible casting; laser ablation; minority carrier lifetime; mono crystalline solar cells; rear passivation stack; Absorption; Abstracts; Films; Laboratories; Lasers; Passivation; Thickness measurement; Casting-mono crystalline silicon; PECVD AlOx; Passivation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4673-0064-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2012.6317800
  • Filename
    6317800