Title :
20.3% efficiency rear passivated silicon solar cells with local back contact using commercial P-Cz wafers
Author :
Wang, Zhenjiao ; Han, Peiyu ; Meng, Oinglei ; Hongqiang Qian ; Wu, Jiaqi ; Jiang, Yongfei ; Tang, Ning ; Lu, Hongyan ; Zhu, Haidong ; Chen, Rulong ; Yang, Peter ; Ji, Jingjia ; Shi, Zhengrong ; Sugianto, Adeline ; Wenhem, Stuart
Author_Institution :
Suntech Power Holdings Co., Ltd., Wuxi, China
Abstract :
In this paper, progress results on the next generation Pluto technology were reported. In the next generation Pluto, we focused on the rear surface design, by improvement of the back internal reflection and passivation we got 20.3% cell efficiency with very high Jsc. Still there is further improvement of the cell design to get high FF and Eff.
Keywords :
Pluto; elemental semiconductors; passivation; silicon; solar cells; Si; back internal reflection; commercial P-Cz wafers; local back contact; next generation Pluto technology; passivation; solar cells; Australia; Passivation; Photovoltaic systems; Pluto; Reflectivity; Semiconductor device modeling; Surface waves;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317806
