DocumentCode :
3516860
Title :
Towards light-trapping free amorphous Si only multi-junction solar cells
Author :
Baik, Seung Jae ; Lim, Koeng Su ; Lee, Jeong Chul
Author_Institution :
Dept. of Electr., Electron., & Control Eng., Hankyong Nat. Univ., Anseong, South Korea
fYear :
2012
fDate :
3-8 June 2012
Abstract :
We propose a thin film solar cell structure that enables ultrathin film absorber application and single material multi-junction structure. This proposal is targeting amorphous Si only multi-junction solar cells on a patterned transparent electrode, which might perform high light harvesting efficiency and high output voltage at the same time. In addition, photon management of this proposed structure does not rely on traditional light trapping scheme but rather on lateral collection scheme with `sidewall solar cells´. To implement the proposed solar cells, a suitable process sequence is suggested, where a challenging node separation process between sidewall solar cells is included. In this work, we present a-Si solar cell on patterned TCO without node separation. We found the signature of absorption path elongation by sidewall solar cells, which is one of the essential principles of our proposed solar cell. This proposal would provide a promising route to a high performance and low cost a-Si only photovoltaics.
Keywords :
Staebler-Wronski effect; amorphous semiconductors; radiation pressure; silicon; solar cells; thin films; Si; absorption path elongation; amorphous silicon; free amorphous multijunction solar cells; lateral collection scheme; light harvesting efficiency; light trapping; node separation; patterned transparent electrode; photon management; sidewall solar cells; single material multijunction structure; thin film solar cell structure; ultrathin film absorber; MOSFETs; Metals; Photovoltaic systems; Staebler-Wronski effect; amorphous silicon; lateral collection; multi-junction solar cells; photon management; photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
ISSN :
0160-8371
Print_ISBN :
978-1-4673-0064-3
Type :
conf
DOI :
10.1109/PVSC.2012.6317812
Filename :
6317812
Link To Document :
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