Title :
Epitaxial n-ZnO on p-Si with native SiOx reduced by Al overlayer
Author :
Huang, Guo-Sin ; Chang, Chun-Fu ; Chen, Q.Y. ; Lin, Jin-Jie ; Wang, Jun-Hau ; Wadekar, P.V. ; Liao, Chih-Hsiung ; Liao, Hua-Hsien ; Huang, Hui-Chun ; Wijesundera, Dharshana ; Chu, W.K. ; Tu, Li Wei ; Ho, N.J.
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
RF magnetron sputtering has been employed to deposit n-type epitaxial zinc oxide thin films on p-type silicon substrates to form p-n diode structures. Native SiOx layers, Commonly found on silicon, typically of a few nanometer thick, would hinder the epitaxial growth of ZnO. In this work, a crystalline metal oxide overlayer was introduced as a buffer by imposing a reduction reaction on the SiOx layer via oxidation of the metal.
Keywords :
II-VI semiconductors; aluminium; epitaxial growth; oxidation; p-i-n diodes; reduction (chemical); semiconductor thin films; silicon compounds; sputter deposition; zinc compounds; Al; RF magnetron sputtering; SiO; ZnO:Si; crystalline metal oxide overlayer; epitaxial growth; epitaxial n-ZnO on p-Si with native SiOx reduced by Al overlayer; n-type epitaxial zinc oxide thin films; oxidation; p-i-n diode structures; reduction reaction; Artificial intelligence; Epitaxial growth; Oxidation; Radio frequency; Sun; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317813
