Title :
High efficiency MJ solar cells and TPV using SiGeSn materials
Author :
Conley, Benjamin R. ; Naseem, Hameed ; Sun, Greg ; Sharps, Paul ; Yu, Shui-Qing
Author_Institution :
Microelectron.-Photonics, Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
We report on the design and efficiency of using the new material system GeSn and SiGeSn for thermophotovoltaic (TPV) and multi-junction (MJ) solar cells. With the addition of SiGeSn alloy to the current MJ design proposed by EMCORE, bandgap energy tuned layers can be monolithically deposited creating a Group IV based, fourjunction solar cell capable of a maximum high efficiency of 47% under AM0 conditions. We also propose the use of GeSn as a compatible relaxed film and active layer for a SiGeSn based TPV.
Keywords :
Ge-Si alloys; energy gap; semiconductor thin films; solar cells; thermophotovoltaic cells; tin alloys; AM0 conditions; SiGeSn; TPV; band gap energy tuned layers; compatible relaxed film; group IV based four junction solar cell; high efficiency MJ solar cells; multijunction solar cells; thermophotovoltaic solar cell; Films; Junctions; Lattices; Metals; Photonic band gap; Photovoltaic cells; CVD; GeSn; SiGeSn; multi-junction solar cell; thermophotovoltaic;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317814
