Title :
Low cost high-efficiency high-density-plasma Silicon-based thin film solar cells with high light-soaking stability
Author :
Hsiao, T.H. ; Shieh, J.M. ; Yu, P.C. ; Shen, C.H. ; Kao, M.H. ; Chiou, U.P. ; Hsieh, W.H.
Author_Institution :
Dept. of Photonics, Inst. of Electro-Opt. Eng. Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We investigate the performance of a single-junction amorphous Si (a-Si) and a-Si/a-Si tandem solar cells fabricated with Inductively Coupled Plasma (ICP) deposition technique. The high-density plasma resulting from high dissociation capacity of ICP enables good-quality hydrogenated Si films to be synthesized at low temperatures. High-density ICP also promotes the diffusion of reactive radicals on substrates and forms a-Si:H films with low defect density. We demonstrate single-junction a-Si solar cells and a-Si/a-Si tandem solar cell with a conversion efficiency of 9.6% and 8.8%, respectively. Highly light-soaking stable high-density plasma-fabricated a-Si and a-Si/a-Si solar cells were demonstrated with photo-induced degradation in conversion-efficiency as low as 7% and 5%, respectively.
Keywords :
amorphous semiconductors; dissociation; hydrogenation; plasma deposition; semiconductor thin films; solar cells; ICP deposition technique; Si:H; efficiency 8.8 percent; efficiency 9.6 percent; high light-soaking stability; high-density ICP; high-density plasma; inductively coupled plasma deposition technique; low cost high-efficiency high-density-plasma silicon-based thin film solar cells; low defect density; photoinduced degradation; reactive radical diffusion; single-junction amorphous solar cells; tandem solar cells; Films; Glass; Photovoltaic cells; Plasmas; Radio frequency; Silicon; Tunneling; ICP-CVD; amorphous silicon; photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317817
