Title :
FET humidity sensors based on titanium oxide film
Author :
Lee, Sung-Pil ; Cha, Jung-Yup ; Yoon, Yeo-Kyung ; Kim, Seong-Jeen
Author_Institution :
Kyungnam Univ., South Korea
Abstract :
Humidity sensitive field effect transistors for an integrated humidity sensors have been fabricated using conventional silicon microtechnology and their hygroscopic characteristics have been investigated. We applied the lift-off techniques for 1000 Å TiO 2 films on gate region. The devices showed typical enhancement characteristics and threshold voltage was about 2.3 V in 60%RH. It can be seen that the threshold voltages of HUSFET decreased from 2.5 V to 2.0 V according to increasing the relative humidities from 30% to 90%. The simulation was carried out for a series of values of relative permittivity (εr), which was varied between 123 and 223
Keywords :
MISFET; dielectric thin films; humidity sensors; microsensors; titanium compounds; HUSFET; TiO2; field effect transistor; hygroscopic characteristics; integrated humidity sensor; lift-off; permittivity; silicon microtechnology; simulation; threshold voltage; titanium oxide film; Capacitance; Chemical sensors; FETs; Humidity; Permittivity; Sensor phenomena and characterization; Silicon; Stability; Thin film sensors; Titanium;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.616631
