• DocumentCode
    3517207
  • Title

    Interface-state-induced degradation of GIDL current in n-MOSFETs under hot-carrier stress

  • Author

    Lai, P.T. ; Xu, J.P. ; Zeng, X. ; Liu, B.Y.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
  • fYear
    1996
  • fDate
    35245
  • Firstpage
    102
  • Lastpage
    105
  • Abstract
    The dependence of increase in post-stress gate-induced-drain-leakage (GIDL) current in n-MOSFET´s on creation of interface states (ΔDit) during hot-carrier stress with VG = 0.5 VD was investigated. An interface-trap-assisted tunneling conduction mechanism is proposed to account for the increase. The stress method of VG = 0.5 VD can generate a lot of interface traps near the valence band in thermal oxide samples, which is considerably suppressed in nitrided oxide samples. From the linear relationship between increase in post-stress GIDL current and created interface-state density during hot-carrier stress, ΔDit values can be estimated
  • Keywords
    MOSFET; hot carriers; interface states; leakage currents; GIDL current; gate-induced-drain-leakage current; hot-carrier stress; interface states; interface traps; n-MOSFET; nitrided oxide; thermal oxide; tunneling conduction; Current measurement; Degradation; Electron traps; Hot carriers; Interface states; MOSFET circuits; Rapid thermal processing; Stress measurement; Tunneling; Virtual colonoscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996., IEEE Hong Kong
  • Print_ISBN
    0-7803-3091-9
  • Type

    conf

  • DOI
    10.1109/HKEDM.1996.566329
  • Filename
    566329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3517207