DocumentCode :
3517678
Title :
Modeling and Analysis Method for Radiation-Induced Upsets in Modern IC Device Models
Author :
Francis, Matt ; Dimitrov, Dimitre ; Holmes, James ; Mantooth, Alan
Author_Institution :
Arkansas Univ., Fayetteville, AR
fYear :
2008
fDate :
1-8 March 2008
Firstpage :
1
Lastpage :
10
Abstract :
As the demand for complex functions to be performed in harsh environments such as space applications converges with continually diminishing IC feature sizes, the traditional methods of circuit design and evaluation break down. The traditional IC design flow is mostly concerned with electrical interactions, in some cases considering power and thermal effects. Proposed is a method for integrating radiation expertise into this traditional IC flow. Specifically, the effect of ionizing radiation upon transient performance of digital and analog circuits is targeted.
Keywords :
integrated circuit design; integrated circuit modelling; radiation effects; analog circuits; complex functions; digital circuits; integrated circuit design flow; integrated circuit device models; power effects; radiation-induced upsets; space applications; thermal effects; Application specific integrated circuits; Digital integrated circuits; Integrated circuit modeling; Ionizing radiation; MOSFET circuits; Performance evaluation; Physics; RLC circuits; Single event transient; Single event upset;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Aerospace Conference, 2008 IEEE
Conference_Location :
Big Sky, MT
ISSN :
1095-323X
Print_ISBN :
978-1-4244-1487-1
Electronic_ISBN :
1095-323X
Type :
conf
DOI :
10.1109/AERO.2008.4526685
Filename :
4526685
Link To Document :
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