Highly Reliable B4-Flash Technology for High Density Embedded NVM Application

Author

Ajika, N. ; Shukuri, S. ; Shimizu, S. ; Ogura, T. ; Mihara, M. ; Kobayashi, K. ; Nakashima, M.

Author_Institution

GENUSION, Inc., Amagasaki, Japan

fYear

2011

fDate

22-25 May 2011

Firstpage

1

Lastpage

2

Abstract

This paper reports 90nm embedded B4-Flash technology and its superior performance and reliability. Embedded B4-Flash has been implemented to certain 90nm CMOS process and fabricated its 16Mbit test array chip. B4-Flash superiority of high speed program and erase, high reliability has been confirmed by evaluating the 16Mbit test array chip and single bit test vehicle. Direct comparison of the retention reliability between B4-Flash and conventional NOR fabricated in the same silicon has been carried out, for the first time. Superiority of B4-Flash reliability to conventional NOR, which has been pointed out in the previous paper has been confirmed, accordingly.

Keywords

CMOS digital integrated circuits; NOR circuits; flash memories; integrated circuit reliability; B4-flash technology reliability; CMOS process; conventional NOR; high density embedded NVM application; retention reliability; single bit test vehicle; size 90 nm; test array chip; Arrays; CMOS process; Flash memory; Logic gates; Nonvolatile memory; Reliability; Vehicles;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2011 3rd IEEE International

Conference_Location

Monterey, CA

Print_ISBN

978-1-4577-0225-9

Electronic_ISBN

978-1-4577-0224-2

Type

conf

DOI

10.1109/IMW.2011.5873185

Filename

5873185