Title :
Highly Reliable B4-Flash Technology for High Density Embedded NVM Application
Author :
Ajika, N. ; Shukuri, S. ; Shimizu, S. ; Ogura, T. ; Mihara, M. ; Kobayashi, K. ; Nakashima, M.
Author_Institution :
GENUSION, Inc., Amagasaki, Japan
Abstract :
This paper reports 90nm embedded B4-Flash technology and its superior performance and reliability. Embedded B4-Flash has been implemented to certain 90nm CMOS process and fabricated its 16Mbit test array chip. B4-Flash superiority of high speed program and erase, high reliability has been confirmed by evaluating the 16Mbit test array chip and single bit test vehicle. Direct comparison of the retention reliability between B4-Flash and conventional NOR fabricated in the same silicon has been carried out, for the first time. Superiority of B4-Flash reliability to conventional NOR, which has been pointed out in the previous paper has been confirmed, accordingly.
Keywords :
CMOS digital integrated circuits; NOR circuits; flash memories; integrated circuit reliability; B4-flash technology reliability; CMOS process; conventional NOR; high density embedded NVM application; retention reliability; single bit test vehicle; size 90 nm; test array chip; Arrays; CMOS process; Flash memory; Logic gates; Nonvolatile memory; Reliability; Vehicles;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873185
