DocumentCode :
3517803
Title :
Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)
Author :
Wong, H. -S Philip ; Kim, SangBum ; Lee, Byoungil ; Caldwell, Marissa A. ; Liang, Jiale ; Wu, Yi ; Jeyasingh, Rakesh ; Yu, Shimeng
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2011
fDate :
22-25 May 2011
Firstpage :
1
Lastpage :
5
Abstract :
The increasing demand for high-capacity non volatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.
Keywords :
flash memories; phase change memories; random-access storage; switching circuits; FLASH memory technology; PCM; RRAM; STTRAM; SiP; SoC design; high-capacity nonvolatile memory; phase change memory; processors; resistive switching random access memory; Heating; Noise; Phase change materials; Phase change memory; Resistance; Switches; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
Type :
conf
DOI :
10.1109/IMW.2011.5873188
Filename :
5873188
Link To Document :
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