DocumentCode
3517803
Title
Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)
Author
Wong, H. -S Philip ; Kim, SangBum ; Lee, Byoungil ; Caldwell, Marissa A. ; Liang, Jiale ; Wu, Yi ; Jeyasingh, Rakesh ; Yu, Shimeng
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
22-25 May 2011
Firstpage
1
Lastpage
5
Abstract
The increasing demand for high-capacity non volatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.
Keywords
flash memories; phase change memories; random-access storage; switching circuits; FLASH memory technology; PCM; RRAM; STTRAM; SiP; SoC design; high-capacity nonvolatile memory; phase change memory; processors; resistive switching random access memory; Heating; Noise; Phase change materials; Phase change memory; Resistance; Switches; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4577-0225-9
Electronic_ISBN
978-1-4577-0224-2
Type
conf
DOI
10.1109/IMW.2011.5873188
Filename
5873188
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