• DocumentCode
    3517803
  • Title

    Recent Progress of Phase Change Memory (PCM) and Resistive Switching Random Access Memory (RRAM)

  • Author

    Wong, H. -S Philip ; Kim, SangBum ; Lee, Byoungil ; Caldwell, Marissa A. ; Liang, Jiale ; Wu, Yi ; Jeyasingh, Rakesh ; Yu, Shimeng

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The increasing demand for high-capacity non volatile memories in the electronic portable and media applications has required continuous scaling of the conventional FLASH memory technology beyond perceived limits. At the same time, system designers envision the use of novel memory technology may revolutionalize the organization of the memory hierarchy of processors and the design of SoC and SiP. This has resulted in the exploration of many alternate memory technologies like PCM, RRAM, STTRAM. In this paper we discuss some of our recent works on understanding the various aspects of PCM and RRAM.
  • Keywords
    flash memories; phase change memories; random-access storage; switching circuits; FLASH memory technology; PCM; RRAM; STTRAM; SiP; SoC design; high-capacity nonvolatile memory; phase change memory; processors; resistive switching random access memory; Heating; Noise; Phase change materials; Phase change memory; Resistance; Switches; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873188
  • Filename
    5873188