• DocumentCode
    3517872
  • Title

    Effects of gate current stress on electrical characteristics of Ge channel pMOSFETs with Si passivation

  • Author

    Harada, Masatomi ; Taoka, Noriyuki ; Yamamoto, Toyoji ; Yamashita, Yoshimi ; Kiso, Osamu ; Sugiyama, Naoharu ; Takagi, Shin-ichi

  • Author_Institution
    MIRAI-ASET, MIRAI-ASET, Tsukuba
  • fYear
    2008
  • fDate
    12-14 March 2008
  • Firstpage
    15
  • Lastpage
    18
  • Abstract
    The electrical properties before and after gate current injection stress are studied for Ge pMOSFETs with Si passivation in order to study the interface robustness against carrier injection stress and the effects of interface charges on the channel mobility. It is found that MOSFETs with thicker Si passivation provide smaller amount of interface charge generation and lower mobility reduction after gate current injection stress.
  • Keywords
    MOSFET; carrier mobility; passivation; carrier injection stress; gate current injection stress; mobility reduction; pMOSFET; passivation; Annealing; Electric variables; Fabrication; Hydrogen; Leakage current; MOS capacitors; MOSFETs; Passivation; Robustness; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
  • Conference_Location
    Udine
  • Print_ISBN
    978-1-4244-1729-2
  • Electronic_ISBN
    978-1-4244-1730-8
  • Type

    conf

  • DOI
    10.1109/ULIS.2008.4527131
  • Filename
    4527131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3517872