Title :
Threshold voltage in ultra thin FDSOI CMOS : Advanced triple interface model and experimental devices
Author :
Mazellier, J.-P. ; Andrieu, F. ; Faynot, O. ; Brevard, L. ; Buj, C. ; Cristoloveanu, S. ; Tiec, Y. Le ; Deleonibus, S.
Author_Institution :
CEA, Grenoble
Abstract :
We present a predictive three interfaces coupling model in long channel Ultra Thin Body SOI MOSFETs. This model includes the effects of volume inversion, thin BOX and film, and substrate-BOX interface. This allows us to perfectly reproduce both simulations and experimental results extracted on FDSOI nMOSFET with 145 and 11 nm thick BOX.
Keywords :
CMOS integrated circuits; MOSFET; interface phenomena; silicon-on-insulator; advanced triple interface model; experimental devices; long channel ultra thin body SOI MOSFET; predictive three interfaces coupling model; substrate-BOX interface; threshold voltage; ultra thin FDSOI CMOS; volume inversion; Etching; Hafnium oxide; MOSFET circuits; Random access memory; Semiconductor device modeling; Semiconductor films; Silicon; Substrates; Threshold voltage; Tin;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527135
