DocumentCode
3517933
Title
Advanced Microelectronics: the role of SOI
Author
Radack, D.J.
Author_Institution
Defense Adv. Res. Projects Agency, Arlington, VA, USA
fYear
1999
fDate
4-7 Oct. 1999
Firstpage
5
Lastpage
7
Abstract
Silicon-on-insulator (SOI) technology has been developed for electronics in harsh environments and more recently for low power electronics. Over the past few years, DARPA´s Advanced Microelectronics Program has sponsored considerable research on 25 nm silicon transistors suitable for highly integrated circuits. Many of the device research efforts under the program are exploiting SOI. The program is described here.
Keywords
integrated circuit design; integrated circuit reliability; integrated circuit technology; low-power electronics; nanotechnology; silicon-on-insulator; 25 nm; DARPA Advanced Microelectronics Program; SOI technology; Si-SiO/sub 2/; device research; harsh environment electronics; highly integrated circuits; low power electronics; silicon nanotransistors; silicon-on-insulator technology; CMOS technology; Double-gate FETs; Fabrication; Integrated circuit interconnections; Integrated circuit technology; Low power electronics; Microelectronics; Power generation economics; Silicon on insulator technology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location
Rohnert Park, CA, USA
ISSN
1078-621X
Print_ISBN
0-7803-5456-7
Type
conf
DOI
10.1109/SOI.1999.819832
Filename
819832
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