Title :
Advanced Microelectronics: the role of SOI
Author_Institution :
Defense Adv. Res. Projects Agency, Arlington, VA, USA
Abstract :
Silicon-on-insulator (SOI) technology has been developed for electronics in harsh environments and more recently for low power electronics. Over the past few years, DARPA´s Advanced Microelectronics Program has sponsored considerable research on 25 nm silicon transistors suitable for highly integrated circuits. Many of the device research efforts under the program are exploiting SOI. The program is described here.
Keywords :
integrated circuit design; integrated circuit reliability; integrated circuit technology; low-power electronics; nanotechnology; silicon-on-insulator; 25 nm; DARPA Advanced Microelectronics Program; SOI technology; Si-SiO/sub 2/; device research; harsh environment electronics; highly integrated circuits; low power electronics; silicon nanotransistors; silicon-on-insulator technology; CMOS technology; Double-gate FETs; Fabrication; Integrated circuit interconnections; Integrated circuit technology; Low power electronics; Microelectronics; Power generation economics; Silicon on insulator technology; Transistors;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819832
