DocumentCode :
3517975
Title :
25nm 64Gb 130mm² 3bpc NAND Flash Memory
Author :
Goldman, M. ; Pangal, K. ; Naso, G. ; Goda, A.
fYear :
2011
fDate :
22-25 May 2011
Firstpage :
1
Lastpage :
4
Abstract :
25nm NAND technology-based 64Gb 3bpc NAND Flash memory with die size of 130mm2 (6.15GB/cm2) is presented. The design including the array architecture is optimized for 25nm process technology while achieving world class performance of 100μs tRD, 2300μs tPROG for write throughput of 6.8MB/s with reliability meeting business requirements.
Keywords :
NAND circuits; flash memories; NAND flash memory; array architecture; reliability meeting business requirement; size 25 nm; Arrays; Couplings; Flash memory; Programming; Reliability; Routing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
Type :
conf
DOI :
10.1109/IMW.2011.5873197
Filename :
5873197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3517975
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