Title :
Nano Accumulation-Mode Suspended-Gate MOSFET: Impact of adhesion forces on electro-mechanical characteristics
Author :
Collonge, Michaë ; Vinet, M. ; Deleonibus, S. ; Ghibaudo, G.
Author_Institution :
CEA-LETI, Grenoble
Abstract :
For the first time, a complete and realistic study of a nano accumulation-mode suspended-gate metal oxide semiconductor field effect transistor (AM SG- MOSFET) is proposed. Adhesion forces described as Van der Waals interactions are considered and it is shown that they strongly impact the electro-mechanical characteristics of the device. They induce a minimal value for the spring constant of the gate and this drastically affects device design. Considering adhesion forces into a physically complete modelling allows knowing the realistic potentialities of an AM SG-MOSFET and the way to design it for low-power applications and hybrid NEMS-CMOS devices.
Keywords :
CMOS integrated circuits; MOSFET; adhesion; low-power electronics; van der Waals forces; Van der Waals interactions; adhesion forces; electro-mechanical characteristics; hybrid NEMS-CMOS devices; low-power applications; nano accumulation-mode suspended-gate MOSFET; Adhesives; Air gaps; Capacitance; Capacitive sensors; Electrostatics; FETs; MOSFET circuits; Micromechanical devices; Solid state circuits; Voltage;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527139
