1.5-V 1.8-GHz SOI low noise amplifiers for PCS receivers

Author

Wei Jin ; Chan, P.C.H. ; Chaohe Hai

Author_Institution

Dept. of EEE, Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

16

Lastpage

17

Abstract

CMOS is competing with bipolar and GaAs in the radio-frequency integrated circuits (RFIC) arena for wireless communications. SOI technology earns more credit for the Si-based CMOS family due to its improved RF performance. SOI promises better device characteristics than bulk technology and reduces substrate noise coupling. In addition, the buried oxide improves the quality (Q) factor of the on-chip planar inductors. So far, only the results of single-transistor low-noise amplifiers (LNA) based on SOI/SOS technology have been reported (Johnson et al., 1998; Harada et al., 1998). This paper reports the first SOI LNA with a cascode topology which offers performance advantages over other circuit configurations. The LNA circuit, operating at 1.8 GHz, can be used as a front-end amplifier for personal communications services (PCS) systems, which are allocated within the 1.7 GHz and 1.9 GHz band.

Keywords

CMOS analogue integrated circuits; Q-factor; UHF amplifiers; buried layers; cellular radio; inductors; integrated circuit noise; network topology; personal communication networks; radio receivers; silicon-on-insulator; 1.5 V; 1.7 to 1.9 GHz; 1.8 GHz; CMOS RFIC; LNA circuit; PCS receivers; Q factor; RF performance; SOI LNA; SOI device characteristics; SOI low noise amplifiers; SOI technology; SOS technology; Si-SiO/sub 2/; Si-based CMOS; buried oxide; cascode topology; circuit configuration; front-end amplifier; on-chip planar inductors; personal communications services systems; quality factor; radio-frequency integrated circuits; single-transistor low-noise amplifiers; substrate noise coupling; wireless communications; CMOS technology; Communications technology; Gallium arsenide; Integrated circuit noise; Integrated circuit technology; Low-noise amplifiers; Personal communication networks; Radiofrequency amplifiers; Radiofrequency integrated circuits; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819836

Filename

819836