Title :
A SOI current memory for analog signal processing at high temperature
Author :
Portmann, L. ; Declercq, M.
Author_Institution :
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
This paper describes a current memory cell integrated in a fully depleted SOI process. The circuit was designed to maintain its performance up to 225/spl deg/C. An application of the memory is demonstrated by measurements of a current doubler for an A/D converter.
Keywords :
MOS memory circuits; analogue processing circuits; high-temperature electronics; integrated circuit design; integrated circuit measurement; silicon-on-insulator; switched current circuits; 225 C; A/D converter; SOI current memory; Si-SiO/sub 2/; analog signal processing; circuit design; circuit performance; current doubler; current memory cell; fully depleted SOI process integration; high temperature circuit; memory application; switched current circuits; Current measurement; Filters; Integrated circuit measurements; Leakage current; MOS capacitors; Signal processing; Switched capacitor circuits; Switching circuits; Temperature sensors; Threshold voltage;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819837
