Comparison between fully- and partially-depleted SOI MOSFET´s for low-power radio-frequency applications

Author

Rozeau, O. ; Jomaah, J. ; Boussey, C. ; Raynaud, C. ; Pelloie, J.L. ; Balestra, F.

Author_Institution

LPCS, Grenoble, France

fYear

1999

fDate

4-7 Oct. 1999

Firstpage

22

Lastpage

23

Abstract

During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.

Keywords

MOSFET; UHF field effect transistors; low-power electronics; microwave field effect transistors; semiconductor device measurement; silicon-on-insulator; RF operating range; SOI architecture; SOI technologies; Si-SiO/sub 2/; fully-depleted MOSFETs; fully-depleted SOI MOSFETs; low-power radio-frequency applications; low-voltage conditions; partially-depleted MOSFETs; partially-depleted SOI MOSFETs; radiofrequency applications; Capacitance; Cutoff frequency; Equivalent circuits; Frequency measurement; MOSFET circuits; Microelectronics; Radio frequency; Scattering parameters; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1999. Proceedings. 1999 IEEE International

Conference_Location

Rohnert Park, CA, USA

ISSN

1078-621X

Print_ISBN

0-7803-5456-7

Type

conf

DOI

10.1109/SOI.1999.819839

Filename

819839