Title :
Comparison between fully- and partially-depleted SOI MOSFET´s for low-power radio-frequency applications
Author :
Rozeau, O. ; Jomaah, J. ; Boussey, C. ; Raynaud, C. ; Pelloie, J.L. ; Balestra, F.
Author_Institution :
LPCS, Grenoble, France
Abstract :
During the past decade, several works have shown that SOI technologies are very promising for radiofrequency applications (Eggert et al., 1997). In this work, we compare two different types of SOI architecture, i.e. fully- and partially-depleted MOSFETs, operating at RF range and under low-voltage conditions.
Keywords :
MOSFET; UHF field effect transistors; low-power electronics; microwave field effect transistors; semiconductor device measurement; silicon-on-insulator; RF operating range; SOI architecture; SOI technologies; Si-SiO/sub 2/; fully-depleted MOSFETs; fully-depleted SOI MOSFETs; low-power radio-frequency applications; low-voltage conditions; partially-depleted MOSFETs; partially-depleted SOI MOSFETs; radiofrequency applications; Capacitance; Cutoff frequency; Equivalent circuits; Frequency measurement; MOSFET circuits; Microelectronics; Radio frequency; Scattering parameters; Transconductance; Voltage;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819839
