• DocumentCode
    3518042
  • Title

    A new Multi Subband Monte Carlo simulator for nano p-MOSFETs

  • Author

    Michielis, M. De ; Esseni, D. ; Palestri, P. ; Selmi, L.

  • Author_Institution
    DIEGM, Univ. of Udine, Udine
  • fYear
    2008
  • fDate
    12-14 March 2008
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    This paper presents a new self-consistent multi- subband Monte Carlo (MSMC) simulator design to investigate quasi-ballistic transport in nano p-MOSFETs. The simulator adopts an accurate analytical description of the warped hole subbands. A first comparison between n - and p - MOSFET performance is reported.
  • Keywords
    MOSFET; Monte Carlo methods; ballistic transport; semiconductor device models; multisubband Monte Carlo simulator; nano p-MOSFET; quasiballistic transport; Analytical models; Anisotropic magnetoresistance; Capacitive sensors; Computational modeling; Electrostatics; Flowcharts; MOSFET circuits; Monte Carlo methods; Particle scattering; Poisson equations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
  • Conference_Location
    Udine
  • Print_ISBN
    978-1-4244-1729-2
  • Electronic_ISBN
    978-1-4244-1730-8
  • Type

    conf

  • DOI
    10.1109/ULIS.2008.4527142
  • Filename
    4527142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518042