Title :
High frequency characterization of SOI dynamic threshold voltage MOS (DTMOS) transistors
Author :
Ferlet-Cavrois, V. ; Bracale, A. ; Fel, N. ; Musseau, O. ; Raynaud, C. ; Faynot, O. ; Pelloie, J.L.
Author_Institution :
CEA, Centre d´Etudes de Bruyeres-le-Chatel, France
Abstract :
The DTMOS architecture is particularly suited to very low supply voltage applications (0.5-0.6 V) (Colinge, 1987; Matloubian, 1993; Assaderaghi et al., 1994; Pelloie et al., 1999). This paper presents the high frequency behavior of DTMOS devices processed with a partially depleted 0.25 /spl mu/m SOI technology (Wilson et al., 1997; Lagnado and de la Houssaye, 1997; Cable, 1997; Ferlet-Cavrois et al., 1998; Tanaka et al., 1997). The paper compares DTMOS to floating body and grounded body MOS transistors, and shows the advantage of SOI DTMOS for very low power portable telecommunication systems.
Keywords :
MOSFET; low-power electronics; microwave field effect transistors; semiconductor device measurement; silicon-on-insulator; telecommunication equipment; 0.25 micron; 0.5 to 0.6 V; DTMOS architecture; DTMOS devices; SOI DTMOS; SOI DTMOS transistors; SOI dynamic threshold voltage MOS transistors; Si-SiO/sub 2/; floating body MOS transistors; grounded body MOS transistors; high frequency behavior; high frequency characterization; partially depleted SOI technology; very low power portable telecommunication systems; very low supply voltage applications; CMOS technology; Calibration; Design optimization; Electrical resistance measurement; Frequency; Isolation technology; Low voltage; MOSFETs; Threshold voltage; Transistors;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819840
