• DocumentCode
    3518050
  • Title

    A First Study on Self-Healing Solid-State Drives

  • Author

    Wu, Qi ; Dong, Guiqiang ; Zhang, Tong

  • Author_Institution
    ECSE Dept., Rensselaer Polytech. Inst. (RPI), Troy, NY, USA
  • fYear
    2011
  • fDate
    22-25 May 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper proposes a self-healing solid-state drive (SSD) design strategy that exploits heat-accelerated interface trap recovery of NAND flash memory cells to largely improve the SSD lifetime. The key is to make each NAND flash memory chip self-healable by stacking an extra heater die, and employ system-level redundancy to ensure SSD data storage integrity when one NAND flash memory chip is being self-heated for accelerating interface trap recovery. Based upon detailed thermal modeling and memory cell device modeling, we carried out simulations and analysis, and the results show that this proposed design strategy can potentially improve SSD lifetime by one order of magnitude at reasonable energy consumption overhead.
  • Keywords
    NAND circuits; flash memories; NAND flash memory chip; heat-accelerated interface trap recovery; memory cell device modeling; self-healing solid-state drive design strategy; system-level redundancy; thermal modeling; Analytical models; Ash; Encapsulation; Heat recovery; Noise; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop (IMW), 2011 3rd IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4577-0225-9
  • Electronic_ISBN
    978-1-4577-0224-2
  • Type

    conf

  • DOI
    10.1109/IMW.2011.5873201
  • Filename
    5873201