DocumentCode
3518050
Title
A First Study on Self-Healing Solid-State Drives
Author
Wu, Qi ; Dong, Guiqiang ; Zhang, Tong
Author_Institution
ECSE Dept., Rensselaer Polytech. Inst. (RPI), Troy, NY, USA
fYear
2011
fDate
22-25 May 2011
Firstpage
1
Lastpage
4
Abstract
This paper proposes a self-healing solid-state drive (SSD) design strategy that exploits heat-accelerated interface trap recovery of NAND flash memory cells to largely improve the SSD lifetime. The key is to make each NAND flash memory chip self-healable by stacking an extra heater die, and employ system-level redundancy to ensure SSD data storage integrity when one NAND flash memory chip is being self-heated for accelerating interface trap recovery. Based upon detailed thermal modeling and memory cell device modeling, we carried out simulations and analysis, and the results show that this proposed design strategy can potentially improve SSD lifetime by one order of magnitude at reasonable energy consumption overhead.
Keywords
NAND circuits; flash memories; NAND flash memory chip; heat-accelerated interface trap recovery; memory cell device modeling; self-healing solid-state drive design strategy; system-level redundancy; thermal modeling; Analytical models; Ash; Encapsulation; Heat recovery; Noise; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location
Monterey, CA
Print_ISBN
978-1-4577-0225-9
Electronic_ISBN
978-1-4577-0224-2
Type
conf
DOI
10.1109/IMW.2011.5873201
Filename
5873201
Link To Document