Title :
High frequency losses in transmission lines made on SIMOX, bulk silicon and depleted silicon/silicon structures formed by wafer bonding
Author :
Johansson, Mikael ; Bergh, M. ; Bengtsson, S.
Author_Institution :
Dept. of Microelectron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
Wafer bonding and etch-back has been used to manufacture a silicon material intended as substrate for high frequency applications. The space charge region surrounding the bonded silicon/silicon interface depletes the silicon, thereby causing semi-insulating behaviour at high frequencies. The formed material was characterized using measurements on metal transmission lines and the results were compared to similar measurements on SIMOX and bulk silicon wafers.
Keywords :
SIMOX; elemental semiconductors; etching; high-frequency transmission lines; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; interface states; interface structure; microwave integrated circuits; silicon; space charge; wafer bonding; Al-Si; Al-SiO/sub 2/-Si; SIMOX; SIMOX wafers; Si; bonded silicon/silicon interface; bulk silicon; bulk silicon wafers; depleted silicon/silicon structures; etch-back; high frequency applications; high frequency losses; metal transmission line measurements; semi-insulating behaviour; silicon depletion; silicon substrate material manufacture; space charge region; transmission lines; wafer bonding; Etching; Frequency; Inorganic materials; Manufacturing; Propagation losses; Silicon; Space charge; Transmission line measurements; Transmission lines; Wafer bonding;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819843
