• DocumentCode
    3518081
  • Title

    Circuits with innovative devices - challenges and chances

  • Author

    Schmitt-Landsiedel, D. ; Werner, C.

  • Author_Institution
    Inst. for Tech. Electron., Tech. Univ. of Munich, Munich
  • fYear
    2008
  • fDate
    12-14 March 2008
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    MOS devices go 3D and new field effect devices appear in the research labs. The talk will regard implications of modified device architectures on established circuit design, showing examples of circuits with multi-gate-FETs and tunneling field effect transistors. The potential of more substantial paradigm changes in circuit design for novel devices was also discussed.
  • Keywords
    MOSFET; integrated circuit design; MOS devices; circuit design; modified device architectures; multigate-FET; tunneling field effect transistors; CMOS digital integrated circuits; CMOS technology; Circuit synthesis; Degradation; Digital circuits; FETs; Inverters; MOSFET circuits; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
  • Conference_Location
    Udine
  • Print_ISBN
    978-1-4244-1729-2
  • Electronic_ISBN
    978-1-4244-1730-8
  • Type

    conf

  • DOI
    10.1109/ULIS.2008.4527145
  • Filename
    4527145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3518081