Title :
Circuits with innovative devices - challenges and chances
Author :
Schmitt-Landsiedel, D. ; Werner, C.
Author_Institution :
Inst. for Tech. Electron., Tech. Univ. of Munich, Munich
Abstract :
MOS devices go 3D and new field effect devices appear in the research labs. The talk will regard implications of modified device architectures on established circuit design, showing examples of circuits with multi-gate-FETs and tunneling field effect transistors. The potential of more substantial paradigm changes in circuit design for novel devices was also discussed.
Keywords :
MOSFET; integrated circuit design; MOS devices; circuit design; modified device architectures; multigate-FET; tunneling field effect transistors; CMOS digital integrated circuits; CMOS technology; Circuit synthesis; Degradation; Digital circuits; FETs; Inverters; MOSFET circuits; Tunneling; Voltage;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527145
