Title :
Latest Advances and Roadmap for In-Plane and Perpendicular STT-RAM
Author :
Driskill-Smith, A. ; Apalkov, D. ; Nikitin, V. ; Tang, X. ; Watts, S. ; Lottis, D. ; Moon, K. ; Khvalkovskiy, A. ; Kawakami, R. ; Luo, X. ; Ong, A. ; Chen, E. ; Krounbi, M.
Author_Institution :
Grandis, Inc., Milpitas, CA, USA
Abstract :
STT-RAM (Spin-Transfer Torque Random Access Memory) is a second-generation magnetic random access memory (MRAM) technology that is fast, non-volatile, durable, and scalable to future technology nodes [1-2]. In this paper, we present the latest advances in in-plane and perpendicular STT-RAM development and outline STT-RAM´s future prospects, applications and roadmap.
Keywords :
random-access storage; MRAM technology; in-plane STT-RAM; perpendicular STT-RAM; roadmap; second-generation magnetic random access memory technology; spin-transfer torque random access memory; Computer architecture; Magnetic tunneling; Materials; Microprocessors; Mobile communication; Random access memory; Thermal stability;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873205
