Title :
´Self-body-biased´ SOI MOSFET through ´depletion isolation effect´
Author :
Terauchi, M. ; Terada, K.
Author_Institution :
Dept. of Comput. Eng., Hiroshima City Univ., Japan
Abstract :
A new SOI MOSFET structure utilizing a novel body potential control scheme is proposed. In its ´on´ state, its body potential is electrically isolated from the external body terminal by the gate depletion layer, and is controlled automatically through the drain current and drain voltage. More than 30% improvement in current drivability is predicted.
Keywords :
CMOS integrated circuits; MOSFET; electric current; isolation technology; semiconductor device models; silicon-on-insulator; SOI MOSFET structure; Si-SiO/sub 2/; body potential; body potential control scheme; current drivability; depletion isolation effect; drain current; drain voltage; electrically isolated body potential; external body terminal; gate depletion layer; on-state; self-body-biased SOI MOSFET; Automatic voltage control; Body regions; Electric potential; Electronic equipment; Impact ionization; Leakage current; Low voltage; MOSFET circuits; Predictive models; Voltage control;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819846
