Title :
On the sub-nm EOT scaling of high-κ gate stacks
Author :
Markov, S. ; Roy, S. ; Fiegna, C. ; Sangiorgi, E. ; Asenov, A.
Author_Institution :
EEE Dept., Univ. of Glasgow, Glasgow
Abstract :
Incorporating recent data for the Si/SiO2 and SiO2/HfO2 interface properties, we simulate the impact of band-gap and permittivity transitions on high-k (HK) gate-stack (GS) metal-oxide-semiconductor (MOS) devices, scaled according to the requirements for effective oxide thickness (EOT) reduction in bulk MOSFETs. Si/SiO2 transition effects dominate, lowering the EOT, increasing over 10 times gate leakage, and shifting over 20% of electrons from the 2-fold, to the 4-fold degenerate valley. Accounting for the interface transition effects is important for accurate HKGS device characterisation and predictive modelling.
Keywords :
MOSFET; silicon compounds; MOS devices; Si-SiO2; bandgap transitions; effective oxide thickness; high-k gate stacks; interface transition effects; metal-oxide-semiconductor; permittivity transitions; predictive modelling; Dielectric constant; Dielectric materials; Dielectric substrates; Effective mass; Gate leakage; Hafnium oxide; MOSFETs; Permittivity; Photonic band gap; Predictive models;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527149
