Title :
An SOI single-electron transistor
Author :
Xiaohui Tang ; Baie, X. ; Bayot, V. ; Van de Wiele, F. ; Colinge, J.P.
Author_Institution :
Microelectron. Lab., Katholieke Univ., Leuven, Belgium
Abstract :
Single-electron transistors (SETs) are currently being investigated by many research groups as possible devices for ultra-high-density, low-power information processing or storage systems. A single-electron transistor consists of two tunnel junctions (TJ) connected to the source and the drain, a center floating node and a capacitance connected to the device gate. It takes a finite minimum source-to center node bias to inject an electron into the node by tunneling. This effect is called Coulomb blockade. In this paper, SET devices were fabricated using thin-silicon (100 nm) Unibond/sup (R)/ wafers and e-beam lithography, and were found to exhibit the Coulomb blockade effects predicted by theory.
Keywords :
Coulomb blockade; capacitance; electron beam lithography; semiconductor device measurement; silicon-on-insulator; single electron transistors; tunnelling; 100 nm; Coulomb blockade; Coulomb blockade effects; SETs; SOI single-electron transistor; Si-SiO/sub 2/; center floating node; device gate capacitance; drain; e-beam lithography; finite minimum source-to center node bias; low-power information processing; low-power storage systems; node electron injection; single-electron transistor; single-electron transistors; source; thin-silicon Unibond wafers; tunnel junctions; tunneling; ultra-high-density information processing systems; ultra-high-density storage systems; Capacitance; Energy states; Fabrication; Potential well; Silicon; Single electron transistors; Temperature measurement; Tunneling; Voltage; Wire;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819851
