Title :
Fully depleted SOI- and sSOI-MOSFETs with GdScO3 as gate dielectric
Author :
Roeckerath, M. ; Lopes, J.M.J. ; Heeg, T. ; Schubert, J. ; Lenk, St. ; Mantl, S.
Author_Institution :
CNI-Center of Nanoelectronic Syst. for Inf. Technol., Inst. for Bio- & Nanosystems (IBN1 -IT), Julich
Abstract :
Long channel n-MOSFETs on thin SOI and sSOI substrates have been prepared integrating gadolinium scandate as high-kappa gate dielectric in a gate last process. The GdScCh films were deposited by electron beam evaporation and subsequently annealed in oxygen atmosphere. Electrical characterization of readily processed devices reveal well behaved output and transfer characteristics with high Ion/Ioff ratios of 106-108 and steep inverse subthreshold slopes of <70 mV/dec. Carrier mobilities of -155 cm/Vs for the SOI and -366 cm2/Vs for the sSOI substrates were determined.
Keywords :
MOSFET; carrier mobility; electron beam annealing; gadolinium compounds; high-k dielectric thin films; silicon-on-insulator; SOI substrate; annealing; carrier mobility; channel n-MOSFETs; electron beam evaporation; gadolinium scandate; high-kappa gate dielectric; sSOI-MOSFETs; steep inverse subthreshold slopes; Annealing; CMOS technology; Dielectric materials; Dielectric substrates; Electron beams; Optical films; Resists; Semiconductor films; Silicon; Thermal stability;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527153
