Title :
A body-contact SOI MOSFET model for circuit simulation
Author :
Su, P. ; Fung, S.K.H. ; Assaderaghi, F. ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.
Keywords :
MOSFET; SPICE; circuit CAD; circuit simulation; circuit stability; delays; electrical contacts; semiconductor device models; silicon-on-insulator; software tools; BSIMPD2.0 circuit simulation; DTMOS; PD SOI transistor; SOI circuit design; SPICE model; Si-SiO/sub 2/; body-contact; body-contact SOI MOSFET model; body-contact nonidealities; circuit simulation; design freedom; floating-body instability; partially depleted SOI transistor; power/delay performance; sensitive circuits; Circuit simulation; Circuit synthesis; Circuit testing; Delay; Diodes; Immune system; MOSFET circuits; Research and development; Resistors; Threshold voltage;
Conference_Titel :
SOI Conference, 1999. Proceedings. 1999 IEEE International
Conference_Location :
Rohnert Park, CA, USA
Print_ISBN :
0-7803-5456-7
DOI :
10.1109/SOI.1999.819853
