Title :
Highly Optimized Nanocrystal-Based Split Gate Flash for High Performance and Low Power Microcontroller Applications
Author :
Yater, Jane ; Hong, C. ; Kang, S.-T. ; Kolar, D. ; Min, B. ; Shen, J. ; Chindalore, G. ; Loiko, K. ; Winstead, B. ; Williams, S. ; Gasquet, H. ; Suhail, M. ; Broeker, K. ; Lepore, E. ; Hardell, A. ; Malloch, W. ; Syzdek, R. ; Chen, Y. ; Ju, Y. ; Kumarasam
Author_Institution :
Microcontroller Solutions Group, Freescale Semicond., Inc., Austin, TX, USA
Abstract :
We show a 90nm nanocrystal-based split gate embedded flash memory that is able to meet the speed, endurance and reliability requirements for 32-bit microcontroller products. A 3.4V operating window is achievable and the process is robust and repeatable across many lots. Erase after 10k cycles can be achieved in 5ms, long-term data retention of cycled arrays is not susceptible to SILC-induced charge loss mechanisms, and program disturb can meet the needs of flash and EEPROM.
Keywords :
flash memories; microcontrollers; semiconductor device reliability; EEPROM; highly optimized nanocrystal-based split gate flash memory; low power microcontroller application; reliability requirements; size 90 nm; time 5 ms; voltage 3.4 V; word length 32 bit; Acceleration; Arrays; Logic gates; Microcontrollers; Nanocrystals; Programming; Reliability;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873213
