Title :
Effects of process conditions for the n+-emitter formation in crystalline silicon
Author :
Dastgheib-Shirazi, Amir ; Steyer, M. ; Micard, G. ; Wagner, H. ; Altermatt, P. ; Hahn, G.
Author_Institution :
Dept. of Phys., Univ. of Konstanz, Konstanz, Germany
Abstract :
Nowadays new solar cell concepts are continually attracting the attention of the PV industry. Thereby emitter structures and the application of high performance emitters like the homogeneous and etched-back emitter on crystalline p- and n-type silicon solar cells continue to be very popular [1]-[4]. In this work we study the influence of process parameters on the phosphosilicate glass layer characteristics during the predeposition of a POCl3 diffusion process. The quantitative analysis of the highly doped layer gives a deeper understanding of the phosphorus diffusion process for industrial emitter structures.
Keywords :
carrier mobility; elemental semiconductors; phosphosilicate glasses; silicon; solar cells; POCl3; Si; crystalline silicon; diffusion process; etched-back emitter; homogeneous emitter; industrial emitter structure; phosphosilicate glass layer; process conditions; solar cell; Silicon; Emitter; POCl3-Diffusion; PSG; Simulation;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4673-0064-3
DOI :
10.1109/PVSC.2012.6317897