Effects of process conditions for the n+-emitter formation in crystalline silicon

Nowadays new solar cell concepts are continually attracting the attention of the PV industry. Thereby emitter structures and the application of high performance emitters like the homogeneous and etched-back emitter on crystalline p- and n-type silicon solar cells continue to be very popular [1]-[4]. In this work we study the influence of process parameters on the phosphosilicate glass layer characteristics during the predeposition of a POCl₃ diffusion process. The quantitative analysis of the highly doped layer gives a deeper understanding of the phosphorus diffusion process for industrial emitter structures.