Title :
Doping Engineering for Random Telegraph Noise Suppression in Deca-Nanometer Flash Memories
Author :
Ghetti, A. ; Amoroso, S.M. ; Mauri, A. ; Compagnoni, C. Monzio
Author_Institution :
Micron Technol., R&D-Technol. Dev., Agrate Brianza, Italy
Abstract :
In this paper we present a detailed simulation analysis of the impact of the substrate doping profile on Random Telegraph Noise (RTN) instabilities in deca-nanometer Floating Gate Flash memories. Following a Monte Carlo procedure, the statistical distribution of the RTN fluctuation amplitude has been computed running a large number of 3D device simulations, with random placement of discrete dopant atoms in the substrate and a discrete single trap at the Oxide/Substrate interface. To explore the effect of the doping profile on RTN instabilities, both retrograde and δ -shape dopings have been investigated, considering their optimal parameters for RTN suppression. This analysis allows to clarify several key issues relating the substrate doping profile and the RTN distribution amplitude. Results are of utmost importance for the assessment of design guidelines for technology optimization against RTN instabilities.
Keywords :
Monte Carlo methods; doping profiles; flash memories; interference suppression; statistical distributions; δ-shape dopings; 3D device simulations; Monte Carlo procedure; RTN fluctuation amplitude; decananometer floating gate flash memories; discrete dopant atoms; discrete single trap; doping engineering; oxide-substrate interface; random telegraph noise suppression; retrograde dopings; statistical distribution; substrate doping profile; Doping; Epitaxial layers; Flash memory; Resource description framework; Simulation; Statistical distributions; Substrates;
Conference_Titel :
Memory Workshop (IMW), 2011 3rd IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4577-0225-9
Electronic_ISBN :
978-1-4577-0224-2
DOI :
10.1109/IMW.2011.5873216
