HF characterisation of sub-100nm UTB-FDSOI with TiN/HfO2 gate stack

For the first time, the high frequency (HF) performance of an ultra-thinned body (UTB) fully depleted silicon-on-insulator (FDSOI) incorporating TiN/HfO2 gate stack is reported. UTB-FDSOI with longer unit width W_u (same total width W_tot) features (results in) higher g_m leading to better HF performance. Despite of the mobility degradation due to the quality of the interface between the high-K dielectric and silicon, the measured transition frequency (f_T) still correspond well to that predicted from the ITRS roadmap, and can also be considered as the first ever experimental f_T measured fit for the Low STand-by Power (LSTP)-based RF/mobile application.