• DocumentCode
    3518336
  • Title

    A 0.5-V, 3-mW, 54/spl times/54-b multiplier with a triple-V/sub th/ CMOS/SIMOX circuit scheme

  • Author

    Fujii, Kenichi ; Douseki, T.

  • Author_Institution
    NTT Telecommun. Energy Labs., Kanagawa, Japan
  • fYear
    1999
  • fDate
    4-7 Oct. 1999
  • Firstpage
    72
  • Lastpage
    74
  • Abstract
    Summary form only given. Sub-1 V CMOS/SOI circuit technology is the most effective candidate for ultra-low-power applications in future ULSIs. We have proposed a triple-V/sub th/ CMOS/SIMOX circuit (Fujii et al., 1998; Douseki et al., 1998) that operates at an ultra low supply voltage of less than 0.5 V. The circuit consists of fully-depleted low- and medium-V/sub th/ CMOS logic gates and partially-depleted high-V/sub th/ power switch transistors. The low-V/sub th/ CMOS logic gates in critical paths and medium-V/sub th/ logic gates in noncritical paths achieve fast operation and leakage current reduction in the active mode. In addition, high-V/sub th/ power-switch transistors dramatically cut the leakage current in the standby mode. To improve circuit performance, the delay time of the critical path in the low-V/sub th/ logic blocks should be reduced and lowand medium-V/sub th/ logic gates should be assigned without any loss of speed. In this paper, we describe a triple-V/sub th/ 54/spl times/54-b multiplier that uses a 108-b adder with a source-controlled transmission-gate multiplexer in the critical path and a Wallace tree block in which low- and medium-V/sub th/ logic gates are automatically assigned using EDA tools.
  • Keywords
    CMOS logic circuits; SIMOX; ULSI; adders; circuit CAD; leakage currents; logic CAD; logic gates; low-power electronics; multiplying circuits; 0.5 V; 108 bit; 3 mW; 54 bit; CMOS logic gates; CMOS/SIMOX circuit; CMOS/SOI circuit technology; EDA tools; Si-SiO/sub 2/; ULSIs; Wallace tree block; active mode; adder; circuit performance; critical paths; delay time; fully-depleted low/medium-threshold CMOS logic gates; leakage current; leakage current reduction; multiplier; noncritical paths; partially-depleted high-threshold power switch transistors; power-switch transistors; source-controlled transmission-gate multiplexer; standby mode; supply voltage; triple-threshold voltage CMOS/SIMOX circuit scheme; ultra-low-power applications; Adders; CMOS logic circuits; CMOS technology; Circuit optimization; Delay effects; Leakage current; Logic circuits; Logic gates; Low voltage; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1999. Proceedings. 1999 IEEE International
  • Conference_Location
    Rohnert Park, CA, USA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-5456-7
  • Type

    conf

  • DOI
    10.1109/SOI.1999.819859
  • Filename
    819859