Title :
Schottky barrier height modulation by Arsenic Dopant segregation
Author :
Urban, C. ; Zhao, Q.T. ; Sandow, C. ; Müller, M. ; Breuer, U. ; Mantl, S.
Author_Institution :
Inst. of Bio- & Nanosystems, Forschungszentrum Julich, Julich
Abstract :
High performance Schottky barrier MOSFETs require metallic source/drain contacts with very low Schottky barrier heights. This investigation focuses on barrier lowering via silicidation induced dopant segregation at the NiSi/Si interface with particular emphasis on the influence of dopant activation prior to Ni-silicidation. Diodes with activated dopants reveal significantly lower Schottky barrier heights than diodes made without dopant activation. The electrical measurements in combination with secondary-ion mass spectroscopy allowed the determination of the effective Schottky barrier heights resulting in minimum barrier heights of around 0.1 eV. Moreover, we present an n-type SB-MOSFET with dopant segregation on thin body SOI which shows an intrinsic performance comparable to a conventional MOSFET.
Keywords :
MOSFET; Schottky barriers; secondary ion mass spectroscopy; semiconductor doping; silicon compounds; silicon-on-insulator; SOI; Schottky barrier MOSFETs; Schottky barrier height modulation; activated dopants; arsenic dopant segregation; dopant activation; metallic source/drain contacts; secondary-ion mass spectroscopy; silicidation induced dopant segregation; Contacts; Electric variables measurement; Hydrogen; Ion implantation; MOSFETs; Nickel; Schottky barriers; Schottky diodes; Silicidation; Temperature;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527161
