Dielectric characteristics of amorphous and crystalline BaHfO3 high-k layers on TiN for memory capacitor applications

Author

Lupina, G. ; Kozlowski, G. ; Dudek, P. ; Dabrowski, J. ; Wenger, Ch. ; Lippert, G. ; Müssig, H.J.

Author_Institution

IHP, Frankfurt

fYear

2008

fDate

12-14 March 2008

Firstpage

159

Lastpage

162

Abstract

The influence of rapid thermal annealing on the dielectric properties of BaHfO₃ high-k dielectric layers was investigated. Annealing treatment at elevated temperatures (~ 800degC) results in a significant increase of the dielectric constant and capacitance density with respect to the untreated films. This result is correlated with the transition from amorphous to the crystalline cubic perovskite structure of BaHfO₃. The effects of the crystallization on the leakage current values, charge transport mechanisms and breakdown field characteristics are reported.

Keywords

capacitors; dielectric properties; memory architecture; BaHfO₃; breakdown field characteristics; capacitance density; crystalline cubic perovskite structure; delectric characteristics; dielectric constant; dielectric layer; dielectric property; memory capacitor; thermal annealing treatment; Amorphous materials; Capacitance; Capacitors; Crystallization; Dielectric constant; Dielectric substrates; Hafnium oxide; Leakage current; Rapid thermal annealing; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on

Conference_Location

Udine

Print_ISBN

978-1-4244-1729-2

Electronic_ISBN

978-1-4244-1730-8

Type

conf

DOI

10.1109/ULIS.2008.4527163

Filename

4527163