Title :
Dielectric characteristics of amorphous and crystalline BaHfO3 high-k layers on TiN for memory capacitor applications
Author :
Lupina, G. ; Kozlowski, G. ; Dudek, P. ; Dabrowski, J. ; Wenger, Ch. ; Lippert, G. ; Müssig, H.J.
Author_Institution :
IHP, Frankfurt
Abstract :
The influence of rapid thermal annealing on the dielectric properties of BaHfO3 high-k dielectric layers was investigated. Annealing treatment at elevated temperatures (~ 800degC) results in a significant increase of the dielectric constant and capacitance density with respect to the untreated films. This result is correlated with the transition from amorphous to the crystalline cubic perovskite structure of BaHfO3. The effects of the crystallization on the leakage current values, charge transport mechanisms and breakdown field characteristics are reported.
Keywords :
capacitors; dielectric properties; memory architecture; BaHfO3; breakdown field characteristics; capacitance density; crystalline cubic perovskite structure; delectric characteristics; dielectric constant; dielectric layer; dielectric property; memory capacitor; thermal annealing treatment; Amorphous materials; Capacitance; Capacitors; Crystallization; Dielectric constant; Dielectric substrates; Hafnium oxide; Leakage current; Rapid thermal annealing; Tin;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527163
