Title :
Electrical characterization and compact modeling of MOSFET body effect
Author :
Quenette, Vincent ; Lemoigne, Pascal ; Rideau, Denis ; Clerc, Raphaël ; Ciampolini, Lorenzo ; Minondo, Michel ; Tavernier, Clément ; Jaouen, Hervé
Author_Institution :
IEF, Orsay
Abstract :
In this paper we report on the impact of the depth dopant profile on MOSFETs threshold voltage shifts induced by bulk biases. This body effect is characterized with an original procedure using experimental data, but also a series of TCAD simulations, including advanced process simulation of the dopant distribution along the depth of the transistor. Finally the impact of the doping profile non-uniformity on the body effect is accounted for within the framework of a charge sheet model.
Keywords :
MOSFET; circuit simulation; digital simulation; technology CAD (electronics); MOSFET body effect; TCAD simulations; bulk biases; charge sheet model; compact modeling; depth dopant profile; electrical characterization; threshold voltage shifts; transistor; CMOS technology; Circuit simulation; Doping profiles; Electric variables; Indium phosphide; MOSFET circuits; Semiconductor device modeling; Semiconductor process modeling; Threshold voltage; Transistors; Body effect; charge sheet model; compact modeling; electrical characterization;
Conference_Titel :
Ultimate Integration of Silicon, 2008. ULIS 2008. 9th International Conference on
Conference_Location :
Udine
Print_ISBN :
978-1-4244-1729-2
Electronic_ISBN :
978-1-4244-1730-8
DOI :
10.1109/ULIS.2008.4527164
